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document number: 94367 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 1 inverter grade thyristors (stud version), 175 a st173spbf series vishay high power products features ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? guaranteed high di/dt ? high surge current capability ? low thermal impedance ? high speed performance ? compression bonding ? lead (pb)-free ? designed and qualified for industrial level typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters electrical specifications product summary i t(av) 175 a to-209ab (to-93) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 175 a t c 85 c i t(rms) 275 a i tsm 50 hz 4680 60 hz 4900 i 2 t 50 hz 110 ka 2 s 60 hz 100 v drm /v rrm 1000 to 1200 v t q range 15 to 25 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st173s 10 1000 1100 40 12 1200 1300
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94367 2 revision: 29-apr-08 st173spbf series vishay high power products inverter grade thyristors (stud version), 175 a current carrying capability frequency units 50 hz 500 320 790 550 4510 3310 a 400 hz 450 290 810 540 1970 1350 1000 hz 330 190 760 490 1050 680 2500 hz 170 80 510 300 480 280 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s case temperature 60 85 60 85 60 85 c equivalent values for rc circuit 47/0.22 47/0.22 47/0.22 / f on-state conduction parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 175 a 85 c maximum rms on-state current i t(rms) dc at 75 c case temperature 275 a maximum peak, one half cycle, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 4680 t = 8.3 ms 4900 t = 10 ms 100 % v rrm reapplied 3940 t = 8.3 ms 4120 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 110 ka 2 s t = 8.3 ms 100 t = 10 ms 100 % v rrm reapplied 77 t = 8.3 ms 71 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1100 ka 2 s maximum peak on-state voltage v tm i tm = 600 a, t j = t j maximum, t p = 10 ms sine wave pulse 2.07 v low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 1.55 high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 1.58 low level value of forward slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.87 m high level value of fo rward slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.82 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latching current i l t j = 25 c, v a = 12 v, r a = 6 , i g = 1 a 1000 switching parameter symbol test conditions values units maximum non-repetitive rate of rise of turned on current di/dt t j = t j maximum, v drm = rated v drm i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s resistive load, gate pulse: 10 v, 5 source 1.1 s maximum turn-off time minimum t q t j = t j maximum, i tm = 300 a, commutating di/dt = 20 a/s v r = 50 v, t p = 500 s, dv/dt: see table in device code 15 maximum 25 180 el i tm 180 el i tm 100 s i tm
document number: 94367 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 3 st173spbf series inverter grade thyristors (stud version), 175 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , higher value avai lable on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 40 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate currrent required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 200 ma maximum dc gate voltage required to trigger v gt 3v maximum dc gate current not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.105 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.04 mounting torque, 10 % non-lubricated threads 31 (275) n m (lbf in) lubricated threads 24.5 (210) approximate weight 280 g case style see dimensions - link at the end of datasheet to-209ab (to-93) r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.016 0.012 t j = t j maximum k/w 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94367 4 revision: 29-apr-08 st173spbf series vishay high power products inverter grade thyristors (stud version), 175 a fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 0 maximum allowable case temperature (c) average on-state current (a) 40 80 120 160 80 90 100 110 120 130 st173s series r thjc (dc) = 0.105 k/w ? conduction angle 20 60 100 140 180 60 c 90 c 180 c 120 c 30 c 0 200 240 280 average on-state current (a) 40 120 80 160 maximum allowable case temperature (c) 70 80 90 100 110 120 130 st173s series r thjc (dc) = 0.105 k/w ? conduction period 30 60 90 120 180 dc average on-state current (a) maximum average on-state power loss (w) 0 50 100 150 200 250 300 350 rms limit 0 100 120 140 160 180 20 60 40 80 180 120 90 60 30 ? conduction angle st173s series t j = 125 c maximum allowable ambient temperature (c) maximum average on-state power loss (w) 0 50 100 150 200 250 300 350 25 125 50 100 75 r thsa = 0.08 k/w - r 0.1 k/w 0.16 k/w 0.2 k/w 0.3 k/w 0.4 k/w 0.8 k/w 1.2 k/w 0.5 k/w average on-state current (a) maximum average on-state power loss (w) 0 200 240 280 40 120 80 160 0 100 200 300 400 500 st173s series t j = 125 c ? conduction period rms limit dc 180 120 90 60 30 maximum average on-state power loss (w) 0 100 200 300 400 500 0.2 k/w r thsa = 0.8 k/w - r 0.3 k/w 0.4 k/w 0.5 k/w 0.8 k/w 1.2 k/w 25 50 75 100 125 maximum allowable ambient temperature (c) 0.1 k/w 0.16 k/w
document number: 94367 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 5 st173spbf series inverter grade thyristors (stud version), 175 a vishay high power products fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - reverse recovered current characteristics fig. 10 - reverse recovery current characteristics 2000 1 10 100 2500 3000 3500 4000 4500 number of equal amplitude half cycle current pulses (n) peak half sine wave on-state current (a) initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s st173s series at any rated load condition and with rated v rrm applied following surge. 1500 0.01 0.1 1 2000 2500 3000 3500 4000 5000 pulse train duration (s) peak half sine wave on-state current (a) initial t j = 125 c no voltage reapplied rated v rrm reapplied st173s series 4500 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1000 10 000 t j = 25 c t j = 125 c instantaneous on-state current (a) instantaneous on-state voltage (v) st173s series 0.01 0.01 0.1 1 10 0.001 0.1 1 square wave pulse duration (s) transient thermal impedance z thjc (k/w) st173s series 0.001 steady state value r thjc = 0.105 k/w (dc operation) 0 20 0 406080100 50 100 150 200 250 st173s series t j = 125 c di/dt - rate of fall of on-state current (a/s) q rr - maximum reverse recovery charge (c) i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 0 20 40 60 80 100 120 i rr - maximum reverse recovery current (a) di/dt - rate of fall of on-state current (a/s) st173s series t j = 125 c 20 0 40 60 80 100 140 160 i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94367 6 revision: 29-apr-08 st173spbf series vishay high power products inverter grade thyristors (stud version), 175 a fig. 11 - frequency characteristics fig. 12 - frequency characteristics fig. 13 - frequency characteristics 10 100 1000 10 000 100 1000 10 000 400 2500 100 pulse basewidth (s) peak on-state current (a) 1000 1500 2000 3000 200 500 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 50 hz t p st173s series sinusoidal pulse t c = 60 c 10 100 1000 10 000 100 1000 10 000 400 2500 100 pulse basewidth (s) peak on-state current (a) 1000 1500 2000 3000 200 500 snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 50 hz t p st173s series sinusoidal pulse t c = 85 c 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st173s series trapezoidal pulse t c = 60 c di/dt = 50 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 400 2500 100 1000 1500 2000 3000 200 500 50 hz 5000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) st173s series trapezoidal pulse t c = 85 c di/dt = 50 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 400 2500 100 1000 1500 2000 3000 200 500 50 hz 5000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 2500 5000 100 1000 1500 2000 200 500 50 hz st173s series trapezoidal pulse t c = 60 c di/dt = 100 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 10 000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 400 2500 5000 100 1000 1500 2000 200 500 50 hz st173s series trapezoidal pulse t c = 85 c di/dt = 100 a/s t p snubber circuit r s = 47 c s = 0.22 f v d = 80 % v drm 10 000
document number: 94367 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-apr-08 7 st173spbf series inverter grade thyristors (stud version), 175 a vishay high power products fig. 14 - maximum on-state ener gy power loss characteristics fig. 15 - gate characteristics pulse basewidth (s) 20 joules per pulse 0.5 0.3 0.2 7.5 peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st173s series sinusoidal pulse 0.1 2 100 000 1 4 pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 3 1 5 10 20 joules per pulse t p st173s series rectangular pulse di/dt = 50 a/s 0.3 0.4 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 (b) v gd i gd (1) (2) (3) device: st173s series (4) frequency limited by p g(av) (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms rectangular gate pulse a) recommended load line for rated di/dt: 20 v, 10 ; t r 1 s b) recommended load line for 30 % rated di/dt: 10 v, 10 t r 1 s (a) t j = 40 c t j = 25 c t j = 125 c
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 94367 8 revision: 29-apr-08 st173spbf series vishay high power products inverter grade thyristors (stud version), 175 a ordering information table 1 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - s = compression bonding stud 5 - voltage code x 100 = v rrm (see voltage ratings table) 10 6 - p = stud base 3/4" 16unf-2a 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet terminals (gate and aux. cathode leads) 1 = fast-on terminals (gate and aux. cathode leads) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 15 18 20 25 30 cl cp ck cj dp dk dj dh fk* fp* eh ej ek ep hj hk fh fj hh - t q (s) 2 = flag terminals (for cathode and gate terminals) 11 - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) - lead (pb)-free * standard part number. all other types available only on request. m = stud base metric threads m16 x 1.5 --- - - device code 5 1 3 24 6 7 8 9 10 11 st 17 3 s 12 p f k 0 - pbf links to related documents dimensions http://www.vishay.com/doc?95079
document number: 95079 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-209ab (to-93) outline dimensions vishay semiconductors dimensions - to-209ab (to-93) in millimeters (inches) note (1) for metric device: m16 x 1.5 - length 21 (0.83) maximum fast-on terminals amp. 280000-1 ref-250 90 (3.54) min. 19 (0.75) max. 4 (0.16) max. white gate red shrink red cathode red silicon rubber 210 (8.26) 10 (0.39) c.s. 0.4 mm 2 (0.006 s.i.) 4.3 (0.17) dia. 38.5 (1.52) max. 16 (0.63) max. 8.5 (0.33) dia. 27.5 (1.08) max. dia. 220 (8.66) 10 (0.39) sw 32 c.s. 25 mm 2 (0.039 s.i.) flexible leads 22 (0.86) min. 35 (1.38) max. 3/4"-16unf-2a (1) 27.5 (1.08) max. white shrink 9.5 (0.37) min. ceramic housing
www.vishay.com for technical questions, contact: indmodules@vishay.com document number: 95079 2 revision: 01-aug-07 outline dimensions vishay semiconductors to-209ab (to-93) dimensions - to-209ab (to-93) flag terminals in millimeters (inches) note (2) for metric device: m16 x 1.5 - length 21 (0.83) maximum ceramic housing 27.5 (1.08) max. 38.5 (1.52) max. 3 (0.12) 80 (3.15) max. dia. 27.5 (1.08) max. 16 (0.63) max. 1.5 (0.06) dia. sw 32 22 (0.89) dia. 6.5 (0.25) 13 (0.51) 14 (0.55) 3/4"-16unf-2a (1)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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